Dr. Roberto Macaluso  −  Research areas and main related publications

 

 

MQW technology and material characterisation

 

- R. Macaluso, H. D. Sun, M. D. Dawson, F. Robert, A. C. Bryce, J. H. Marsh and H. Riechert: “Selective modification of bandgap in GaInNAs/GaAs structures by quantum well intermixing”, Applied Physics Letters, 82, 4259 (2003).

 

- H. D. Sun, R. Macaluso, M. D. Dawson, F. Robert, A. C. Bryce, J. H. Marsh and H. Riechert: “Characterization of selective quantum well intermixing in 1.3 mm GaInNAs/GaAs structures”, Journal of Applied Physics, 94, 1550 (2003).

 

 

GaInNAs-based vertical-cavity structures

 

- A.H. Clark, S. Calvez, N. Laurand, R. Macaluso, H.D. Sun, M.D. Dawson, T. Jouhti, J. Kontinnen and M. Pessa: “Long-Wavelength Monolithic GaInNAs Vertical-Cavity Optical Amplifiers”, IEEE Journal of Quantum Electronics, 40, 878 (2004).

 

- S. Calvez, J.-M. Hopkins, A. A. Smith, A.H. Clark, R. Macaluso, H.D. Sun, M.D. Dawson, T. Jouhti and M. Pessa, K. Gundogdu, K. C. Hall and T. F. Boggess: “GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 mm device applications”, Journal of Crystal Growth, 268, 457 (2004).

 

- H. D. Sun, R. Macaluso, S. Calvez, G. J. Valentine, D. Burns, M. D. Dawson, K. Gundogdu, K. C. Hall, T. F. Boggess, T. Jouthi and M. Pessa: “Effects of rapid thermal annealing on the optical properties of low-loss 1.3 mm GaInNAs/GaAs saturable Bragg reflectors”, Journal of Applied Physics, 96, 1418 (2004).

 

- R. Macaluso, F. Robert, C. A. Bryce, S. Calvez and M. D. Dawson: “Resonant wavelength control of a 1.3 mm microcavity by intracavity steam oxidation”, Semiconductor Science and Technology, 18, L12 (2003).

 

- R. Macaluso, F. Robert, C. A. Bryce, S. Calvez and M. D. Dawson: “Microreflectivity studies of wavelength control in oxidised AlGaAs microcavity”, Material Science Engineering B, 102, 317 (2003).

 

- S. Calvez, A.H. Clark, J.-M. Hopkins, R. Macaluso, P. Merlin, H.D. Sun, M.D. Dawson, T. Jouhti and M. Pessa: “1.3 mm GaInNAs optically-pumped vertical cavity semiconductor optical amplifier”, Electronics Letters, 39, 100 (2003).

 

- S. Calvez, A. H. Clark, J.-M. Hopkins, R. Macaluso, P. Merlin, H. D. Sun, M. D. Dawson, T. Jouhti and M. Pessa: “1.3 mm GaInNAs monolithic vertical-cavity semiconductor optical amplifier”, 15th International Conference on Indium Phosphide and Related Materials (IPRM ’03), Paper WB1.3, Santa Barbara (CA), May 2003.

 

- H. D. Sun, R. Macaluso, S. Calvez, G.J. Valentine, D. Burns and M.D. Dawson: “1.3 mm GaInNAs/GaAs Bragg-mirror-based structures for passive mode-locking of solid-state and semiconductor lasers”, International Workshop on the Physics & Technology of dilute Nitrides for Optical Communications, Istanbul (Turkey), 8-12 September 2002.

 

 

Solid state lasers

 

- G. J. Valentine, H. D. Sun, R. Macaluso, S. Calvez, D. Burns, M.D. Dawson, T. Jouhti and M. Pessa: “High-power picosecond quasi-CW 1.3 mm Nd-laser passively modelocked using novel low-loss GaInNAs SBRs”, Conference on Laser and Electro-Optics (CLEO)-Europe, Paper CA3-3-TUE, Munich (Germany), June 2003.

 

- H. D. Sun, G. J. Valentine, R. Macaluso, S. Calvez, D. Burns and M. D. Dawson: “Low-loss 1.3 µm GaInNAs saturable Bragg reflector for high-power picosecond neodymium lasers”, Optics Letters, 27, 2124 (2002).

 

- G. Vysniauskas, M. Hetterich, R. Macaluso, D. Burns, M.D. Dawson, E. Bente, A.Y. Egorov and H. Riechert: “GaInNAs VCSEL structure as a modelocking element for a 1.3mm Nd:YVO4 laser”, Conference on Laser and Electro-Optics (CLEO), Baltimore (Maryland), May 2001, Tech. Digest CWA3, pg. 267.

 

 

Integrated laser-modulator devices for telecom applications

 

- B. K. Saravanan, T. Wenger, C. Hanke, P. Gerlach, M. Peschke and R. Macaluso: “Wide temperature operation of 40-Gb/s 1550-nm electroabsorption modulated lasers”, IEEE Photonics Technology Letters, 18, 862 (2006).

 

- B. K. Saravanan, C. Hanke, T. Knödl, M. Peschke, R. Macaluso and B. Stegmüller: “Integrated InGaAlAs/InP laser-modulator using an identical multiple quantum well active layer”. Proceeding of SPIE Vol. 5729, pg 160-169. Photonic West Conference, San Jose (CA), January 2005.

 

- T. Knödl, C. Hanke, B. K. Saravanan, M. Peschke, R. Macaluso and B. Stegmüller: “40 GHz Monolithic Integrated 1.3 mm InGaAlAs-InP Laser-Modulator with Double-Stack MQW Layer Structure”, presented at the Annual Laser and Electro Optics Society (LEOS) Meeting, Paper  WY3, pg. 675-676, Puerto Rico, November 2004.

 

 

Thin films technology

 

- C. Calì, R. Macaluso, M. Mosca: “Effects of the process conditions on the plume of a laser-irradiated indium-tin-oxide target”, Optics Communications, 197, 341 (2002).

 

- C. Calì, R. Macaluso, M. Mosca: “In situ monitoring of pulsed laser indium-tin-oxide film deposition by optical emission spectroscopy”, Spectrochimica Acta B, 56, 743 (2001).